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              光注入退火爐

              光注入退火爐

              調(diào)節(jié)電池片費米能級變化,控制H總量及價態(tài),提高H鈍化與缺陷修復效率,達到降低P型電池衰減效應,提高N型電池轉(zhuǎn)換效率的效果。

              設備名稱 Equipment Name

              光注入退火爐  Light Injection Annealing Furnace

              設備型號 Equipment Model

              SC-LED05L/RA


              設備用途 Equipment Application

              調(diào)節(jié)電池片費米能級變化,控制H總量及價態(tài),提高H鈍化與缺陷修復效率,達到降低P型電池衰減效應,提高N型電池轉(zhuǎn)換效率的效果。

              By adjusting the Fermi energy level of the cell, controlling the total amount and valence state of H,improving the efficiency of H passivation and defect repair, to reduce the LID effect of P-type cells and improve the conversion efficiency of N-type cells.


              工藝流程  Process Flow

              預熱→光注入→冷卻

              Pre-heating →Light Injection →Cooling


              技術特點  Features

              1、雙軌產(chǎn)線,機架電氣完全獨立,互不干擾。

              Dual-track production line, the rack and electrical parts completely independent without interfering operations of each other.

              2、大產(chǎn)能:匹配絲印工序產(chǎn)能,CT≤0.80秒,基于硅片尺寸M10(18X±0.5mm*18X±0.5mm)。
              High throughput: match with the throughput of screen printing process, CT≤0.80s,based on silicon wafer size M10 (18X±0.5mm*18X±0.5mm). 


              設備參數(shù)  Parameters